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The Evolution of GaN LED Technology

Balakrishnan Krishnan, Ph.D.

Associate Director of Research and Technology Services
International Consortium for Advanced Manufacturing Research (ICAMR)

Contact:
Swaminathan Rajaraman, Ph.D.
Assistant Professor
NanoScience Technology Center
Email: Swaminathan.Rajaraman@ucf.edu

Date: Friday, December 9, 2016; 11:00am - 12:00pm
Cost: Free and open to the public
Location: Research Pavilion, Room 169 (NanoScience Technology Center)

Abstract:
The group III nitrides (AlN, GaN and InN) represent an important trio of semiconductors because of their direct band gaps which span the range 0.6-6.2 eV, including the whole of the visible region and extending well out into the ultraviolet (UV) range. They form a complete series of ternary alloys which, in principle, makes available any band gap within this range and the fact that they also generate efficient luminescence has been the main driving force for their recent technological development. High brightness visible light-emitting diodes (LEDs) are now commercially available, a development which has transformed the market for LED-based full color displays and which has opened the way to many other applications. Key inventions during the development of blue LEDs and laser diodes (LDs) the led to lighting revolution will be discussed.

Biography:
Balakrishnan Krishnan is currently an Associate Director of Research and Technology Services at the International Consortium for Advanced Manufacturing Research (ICAMR). He has more than 25 years of research experience in various aspects of III-V and III-Nitride Semiconductors. After earning his Ph.D. in Semiconductor Physics (Crystal Growth and Characterization) from Anna University, India, in 1992, he moved to Japan and did extensive research on III-nitride & III-V epitaxy and devices. From 2007 until 2010 he served as a faculty at the University of South Carolina and during this period he continued to focus on MOCVD growth of nitride semiconductors and devices. Later, he worked as a Senior Research Scientist and Technology Lead at Veeco Instruments. As a part of his assignment, he collaborated with many of the world’s leading GaN based optoelectronic and electronic device manufacturers/suppliers, and research institutions on MOCVD projects. He is also a consultant for Nitek Inc. and Alliance MOCVD. He is the author of 148 journal publications, 10 book chapters, and 260 conference presentations (including 26 invited lectures). He is the reviewer for several technical journals and is a member of many professional societies including Materials Research Society and American Association for Crystal Growth.

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